GT50G321中文资料TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT数据手册Toshiba规格书
GT50G321规格书详情
描述 Description
The 4th Generation
Current Resonance Inverter Switching Applications
• FRD included between emitter and collector
• Enhancement-mode
• High speed: tf = 0.30 µs (typ.) (IC = 60 A)
• Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)
技术参数
- 型号:
GT50G321
- 制造商:
TOSHIBA
- 制造商全称:
Toshiba Semiconductor
- 功能描述:
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
23+ |
TO3PL |
58000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
INFINEON |
100 |
原装现货,价格优惠 |
询价 | ||||
银茂微 |
23+ |
MODULE |
4500 |
专营国产功率器件 |
询价 | ||
TOS |
23+ |
TO-3PL |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
TOSHIBA/东芝 |
23+ |
NA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TOSHIBA |
25+23+ |
TO3PL |
47601 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
TOS |
24+ |
TO-3PL-3 |
8866 |
询价 | |||
TOSHIBA |
05+ |
TO-3PL |
10000 |
全新原装 绝对有货 |
询价 | ||
TOS |
23+ |
3PL |
20000 |
正品原装货价格低 |
询价 | ||
TOSHIBA/东芝 |
07+ |
ZIP |
9975 |
只做原厂原装,认准宝芯创配单专家 |
询价 |