| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
CMOSVoltageDetectorICswithadjustableoutputdelay. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
LowVoltageDetectorICwithAdjustableOutputDelay | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
2C20SOLIDTCSR-PVCPVCCOMMUNICATIONCABLE | GENERALGeneral Electric 通用电气公司美国通用电气公司 | GENERAL | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-33A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-33A,RDS(ON)=18mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=30mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •LoadSwitch •BatterySwitch | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-9.3A,RDS(ON)=18mW@VGS=-10V. RDS(ON)=30mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-9.3A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-33A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-33A,RDS(ON)=18mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=30mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor | CHENMKOCHENMKO CHENMKO | CHENMKO |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
15+ |
SOP18 |
1300 |
全新原装正品现货 |
询价 | |||
GT |
04+ |
SOP-18 |
4732 |
库存刚更新加微13425146986 |
询价 | ||
N/A |
2023+ |
SOP-18 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
N/A |
21+ |
SOP-18 |
35200 |
一级代理/放心采购 |
询价 | ||
GT |
09+ |
SOP |
390 |
普通 |
询价 | ||
23+ |
SOP-18 |
7300 |
专注配单,只做原装进口现货 |
询价 | |||
23+ |
SOP-18 |
7300 |
专注配单,只做原装进口现货 |
询价 | |||
GHI |
23+ |
高频管 |
330 |
专营高频管模块,全新原装! |
询价 | ||
GHZ |
23+ |
109 |
现货供应 |
询价 | |||
GHZ |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 |
相关规格书
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- GT60M301
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- GVT7364A16TS-12TR
- GX1-266B-85-1.8
- GX4201
- H0023T
- H1012
- H1102
- H1164
- H11A2
- H11A550
- H11A817A
- H11A817C
- H11AA2
- H11AA4
- H11AV1
- H11AV2
- H11B1
- H11C1
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- H11D2
- H11F1
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- H11L1
- H11L1-M
- H11L3
- H11N2
- H2000
- H3130
- H3532AC
- H5020
- H6115
- H7210
- H723A
