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GS8161E18BT-250I

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now

文件:1.39199 Mbytes 页数:35 Pages

GSI

GS8161E18BT-250IV

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in sync

文件:1.39331 Mbytes 页数:35 Pages

GSI

GS8161E18BT-250V

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in sync

文件:1.39331 Mbytes 页数:35 Pages

GSI

GS8161E18BT-V

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in sync

文件:1.39331 Mbytes 页数:35 Pages

GSI

详细参数

  • 型号:

    GS8161E18BT

  • 制造商:

    GSI

  • 制造商全称:

    GSI Technology

  • 功能描述:

    1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

供应商型号品牌批号封装库存备注价格
GSI Technology
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
943
询价
更多GS8161E18BT供应商 更新时间2025-10-13 15:01:00