GS8161E18BT-V

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

FunctionalDescription Applications TheGS8161ExxB(T/D)-xxxVisa18,874,368-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfindsapplicationinsync

GS8161E18

1Mx18,512Kx32,512Kx3618MbSyncBurstSRAMs

FunctionalDescription Applications TheGS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D)isa18,874,368-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfin

GS8161E18BT

1Mx18,512Kx36,512Kx3618MbSyncBurstSRAMs

FunctionalDescription Applications TheGS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D)isa18,874,368-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenow

GS8161E18D

18MbSyncBurstSRAMs

Features •FTpinforuser-configurableflowthroughorpipelineoperation •DualCycleDeselect(DCD)operation •IEEE1149.1JTAG-compatibleBoundaryScan •2.5Vor3.3V+10%/–10%corepowersupply •2.5Vor3.3VI/Osupply •LBOpinforLinearorInterleavedBurstmode •Inte

GS8161E18DD

18MbSyncBurstSRAMs

Features •FTpinforuser-configurableflowthroughorpipelineoperation •DualCycleDeselect(DCD)operation •IEEE1149.1JTAG-compatibleBoundaryScan •2.5Vor3.3V+10%/–10%corepowersupply •2.5Vor3.3VI/Osupply •LBOpinforLinearorInterleavedBurstmode •Inte

GS8161E18DGT

18MbSyncBurstSRAMs

Features •FTpinforuser-configurableflowthroughorpipelineoperation •DualCycleDeselect(DCD)operation •IEEE1149.1JTAG-compatibleBoundaryScan •2.5Vor3.3V+10%/–10%corepowersupply •2.5Vor3.3VI/Osupply •LBOpinforLinearorInterleavedBurstmode •Inte