首页 >GRP-DATA-JANTXV1N5806US>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HERMETICAXIAL/MELFLEADRECTIFIER UltrafastRecoveryRectifier •Hermetic,non-cavityglasspackage •Metallurgicallybonded •OperatingandStorageTemperature:-65°Cto+175°C | SENSITRON SENSITRON SEMICONDUCTOR | SENSITRON | ||
MILITARYAPPROVED,HIGHEFFICIENCY,2.5AMPAND6.0AMP DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
ULTRAFASTMILITARYRECTIFIERS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
MILITARYAPPROVEDHIGHEFFICIENCY2.5AMPAND6.0AMP DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HERMETICAXIAL/MELFLEADRECTIFIER UltrafastRecoveryRectifier •Hermetic,non-cavityglasspackage •Metallurgicallybonded •OperatingandStorageTemperature:-65°Cto+175°C | SENSITRON SENSITRON SEMICONDUCTOR | SENSITRON | ||
MILITARYAPPROVEDHIGHEFFICIENCY2.5AMPAND6.0AMP DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS FEATURES: •ChipOutlineDimensions:41x41mils •ChipThickness:8to12mils •AnodeMetallization:Aluminum •MetallizationThickness:50,000ÃNominal •BondingArea:23x23milsMin. •BackMetallization:Gold •JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign •Back | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS FEATURES: •ChipOutlineDimensions:41x41mils •ChipThickness:8to12mils •AnodeMetallization:Aluminum •MetallizationThickness:50,000ÃNominal •BondingArea:23x23milsMin. •BackMetallization:Gold •JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign •Back | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS FEATURES: •ChipOutlineDimensions:41x41mils •ChipThickness:8to12mils •AnodeMetallization:Aluminum •MetallizationThickness:50,000ÃNominal •BondingArea:23x23milsMin. •BackMetallization:Gold •JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign •Back | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS FEATURES: •ChipOutlineDimensions:41x41mils •ChipThickness:8to12mils •AnodeMetallization:Aluminum •MetallizationThickness:50,000ÃNominal •BondingArea:23x23milsMin. •BackMetallization:Gold •JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign •Back | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
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