GP10MLH

Low VF Rectifier Diode

IFSM=50Amp VF FEATURES *Halogen-freetype *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *CompliancetoRoHSproduct *Lowforwardvoltagedrop *1.0AmpereoperationatTA=75oCwithnothermalrunaway *Plasticpackagehas

GP10MM

1.0A Sintered Glass Passivated Rectifier

Features •Sinteredglasspassivated(SGP)rectifierchip •CapableofmeetingenvironmentalstandardsofMIL-S-19500 •1.0AoperationatTA=75°Cand55°Cwithnothermalrunaway •Hightemperaturesolderingguaranteed:260°C/10seconds/.0375(9.5mm)leadlength,5lbs(2.3kg)tensio

GP10N

Glass Passivated Junction Rectifiers

Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Hightemperaturemetallurgicallybondedconstruction •Cavity-freeglasspassivatedjunction •CapableofmeetingenvironmentalstandardsofMIL-S-19500 •1.0AmpereoperationatTA=75°Cand55°Cwith

GP10N

SINTERED GLASS PASSIVATED JUNCTION RECTIFIER

SINTEREDGLASSPASSIVATEDJUNCTIONRECTIFIER FEATURES *GPRC(GlassPassivatedRectifierChip)inside *Glasspassivatedcavity-freejunction *CapableofmeetingenvironmentalstandardsofMIL-S-19500 *1.0AmpereoperationatTA=75oCand55oCwithnothermalrunaway *Typical

GP10N

GLASS PASSIVATED JUNCTION RECTIFIER

ReverseVoltage-50to1600VoltsForwardCurrent-1.0Ampere FEATURES ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Hightemperaturemetallurgicallybondedconstruction ♦Glasspassivatedcavity-freejunction ♦Capableofmeetingenvironmenta

GP10NB37LZ

10 A - 410 V internally clamped IGBT

Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thebuiltincollector-gateZenerexhibits averypreciseactiveclampingwhilethegateemitterZenersuppliesanESDprotection. Feat

GP10NB60SD

N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT

Description Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.ThesuffixSidentifiesafamilyoptimizedachieveminimumon-voltagedropforlowfrequencya

GP10NC60KD

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswit

GP10Q

1.0A Sintered Glass Passivated Rectifier

Features •Sinteredglasspassivated(SGP)rectifierchip •CapableofmeetingenvironmentalstandardsofMIL-S-19500 •1.0AoperationatTA=75°Cand55°Cwithnothermalrunaway •Hightemperaturesolderingguaranteed:260°C/10seconds/.0375(9.5mm)leadlength,5lbs(2.3kg)tensio

GP10Q

Glass Passivated Junction Rectifiers

Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Hightemperaturemetallurgicallybondedconstruction •Cavity-freeglasspassivatedjunction •CapableofmeetingenvironmentalstandardsofMIL-S-19500 •1.0AmpereoperationatTA=75°Cand55°Cwith