4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

Description The GM71V(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)17403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)17403C/CL offers Extended Data Out (EDO) Page

文件：99.41 Kbytes 页数：10 Pages

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4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

Description The GM71V(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)17403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)17403C/CL offers Extended Data Out (EDO) Page

文件：99.41 Kbytes 页数：10 Pages

Hynix

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4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

Description The GM71V(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)17403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)17403C/CL offers Extended Data Out (EDO) Page

文件：99.41 Kbytes 页数：10 Pages

Hynix

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4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

Description The GM71V(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)17403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)17403C/CL offers Extended Data Out (EDO) Page

文件：99.41 Kbytes 页数：10 Pages

Hynix

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4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

Description The GM71V(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)17403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)17403C/CL offers Extended Data Out (EDO) Page

文件：99.41 Kbytes 页数：10 Pages

Hynix

海力士

4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

Description The GM71V(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)17403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)17403C/CL offers Extended Data Out (EDO) Page

文件：99.41 Kbytes 页数：10 Pages

Hynix

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4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

Description The GM71V(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)17403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)17403C/CL offers Extended Data Out (EDO) Page

文件：99.41 Kbytes 页数：10 Pages

Hynix

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4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

Description\nThe GM71V(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)17403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)17403C/CL offers Extended Data Out (EDO) Page Mod * 4,194,304 Words x 4 Bit Organization\n* Extended Data Out Mode Capability\n* Single Power Supply (3.3V +/- 0.3V)\n* Fast Access Time & Cycle Time* Low Power\n   Active : 432/369/360mW (MAX)\n   Standby : 7.2mW (CMOS level : MAX)\n               : 0.36mW (L-version : MAX)\n* RAS Only Refresh, CAS b;

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4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

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CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns

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