GM71V17403C数据手册SK hynix中文资料规格书

描述 Description

The GM71V(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)17403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)17403C/CL offers Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address inputs permit the GM71V(S)17403C/CL to be packaged in a standard 300 mil 24(26) pin SOJ, and a standard 300 mil 24(26) pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

特性 Features

* 4,194,304 Words x 4 Bit Organization
* Extended Data Out Mode Capability
* Single Power Supply (3.3V +/- 0.3V)
* Fast Access Time & Cycle Time* Low Power
   Active : 432/369/360mW (MAX)
   Standby : 7.2mW (CMOS level : MAX)
               : 0.36mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 2048 Refresh Cycles/32ms
* 2048 Refresh Cycles/128ms (L-version)
* Self Refresh Operation (L-version)
* Battery Backup Operation (L-version)
* Test Function : 16bit parallel test mode