N-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS 30V RDS(ON) 21mΩ ID 36A Description The GI40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low v

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GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：242.23 Kbytes 页数：5 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS 30V RDS(ON) 17mΩ ID 40A Description The GU40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applicat

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GTM

勤益投资控股

N-Channel Enhancement-Mode MOSFET (25V, 40A)

Features • RDS(on)=16mΩ@VGS=10V, ID=20A • RDS(on)=25mΩ@VGS=4.5V, ID=20A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Improved Shoo

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HSMC

华昕