N-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS 30V RDS(ON) 17mΩ ID 40A Description The GU40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applicat

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GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

勤益投资控股

N-Channel Enhancement-Mode MOSFET (25V, 40A)

Features • RDS(on)=16mΩ@VGS=10V, ID=20A • RDS(on)=25mΩ@VGS=4.5V, ID=20A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Improved Shoo

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HSMC

华昕

N-CHANNEL Power MOSFET

[magic-matsu]

文件：90.5 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-CHANNEL Power MOSFET

FEATURES ♦ Low ON Resistance ♦ Low Gate Charge ♦ Peak Current vs Pulse Width Curve ♦ Inductive Switching Curves APPLICATION ♦ Fast Switching ♦ Simple Drive Requirement ♦ Low Gate Charge

文件：88.1 Kbytes 页数：4 Pages

SUNTAC