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STGP8NC60KD

600V-8A-shortcircuitruggedIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP8NC60

N-CHANNEL600V-0.85ohm-7ATO-220/TO-220FPPowerMesh?줚IMOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.Thelayoutre finementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. APPLICATION

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP8NC60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP8NC60FP

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP8NC60FP

N-CHANNEL600V-0.85ohm-7ATO-220/TO-220FPPowerMesh?줚IMOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.Thelayoutre finementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. APPLICATION

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    GF8NC60KD

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    600 V - 8 A - short circuit rugged IGBT

供应商型号品牌批号封装库存备注价格
ST
1926+
TO-220FP
6852
只做原装正品现货!或订货假一赔十!
询价
ST
23+24
TO220F
16790
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC
询价
ST/意法半导体
TO-220F
23+
8000
终端免费提供样品 可开13%增值税发票
询价
ST
21+
TO-220F
23480
询价
N/A
23+
80000
专注配单,只做原装进口现货
询价
N/A
23+
80000
专注配单,只做原装进口现货
询价
SAMSUMG
16+
BGA
4000
进口原装现货/价格优势!
询价
GENNUM
24+
QFP
67
询价
GENNUM
99+
QFP
2500
全新原装进口自己库存优势
询价
GENNUM
23+
QFP-240
7750
全新原装优势
询价
更多GF8NC60KD供应商 更新时间2025-5-16 18:55:00