丝印：GEA；Package：SOT25；LOW POWER LOW OFFSET VOLTAGE SINGLE COMPARATOR

Features • Wide Supply Voltage Range  Single Supply: 2V to 36V  Dual Supplies: ±1V to ±18V • Low Supply Current at VCC=5V: 0.4mA • Low Input Bias Current: 25nA (Typical) • Low Input Offset Current:5nA (Typical) • Low Input Offset Voltage: 1mV (Typical) • Input Common Mode Voltage Range I

文件：863.6 Kbytes 页数：10 Pages

DIODES

美台半导体

丝印：GEA；Package：SMC；Transient Voltage Suppressors

Surface Mount TVS ■ 1500 Watt Peak Power ■ Dimension

文件：3.04772 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：GEA；Package：DO-214AB；5.0 To 440V 1500W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 1μA above 11V 1500W Peak power capability at 10 × 1000μs waveform Repetition rate (

文件：4.24665 Mbytes 页数：8 Pages

UNSEMI

优恩半导体

丝印：GEA；Package：SMAJ；1500W Transient Voltage Suppression Diodes

文件：1.12743 Mbytes 页数：11 Pages

FUTUREWAFER

丝印：GEA；Package：SMC；Surface Mount Transient Voltage Suppressors

文件：312.25 Kbytes 页数：4 Pages

ANOVA

林朋科技

Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology

Features and Benefits High Capacity • 15 k to 1 M System Gates • Up to 144 kbits of True Dual-Port SRAM • Up to 300 User I/Os Reprogrammable Flash Technology • 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process • Instant On Level 0 Support • Single-Chip Solution

文件：10.50173 Mbytes 页数：212 Pages

MICROSEMI

美高森美

Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology

Features and Benefits High Capacity • 15 k to 1 M System Gates • Up to 144 kbits of True Dual-Port SRAM • Up to 300 User I/Os Reprogrammable Flash Technology • 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process • Instant On Level 0 Support • Single-Chip Solution

文件：10.50173 Mbytes 页数：212 Pages

MICROSEMI

美高森美

Halogen Free, High Tg, High Elastic Modulus, Low CTE Multilayer Material

■Features ●MCL-E-705G has low CTE values in X,Y directions and 　reduces warpage of package substrate significantly. ●MCL-E-705G Type（L） has lower CTE value（侑5ppm/℃). ●MCL-E-705G Type（LH） has lower CTE value（3ppm/℃). ●Well-suited for build-up construction. ■Applications ●Semiconductor pack

文件：224.07 Kbytes 页数：2 Pages

RESONAC

T SERIES IP 68 PUSH-PULL CONNECTORS

文件：13.17394 Mbytes 页数：28 Pages

LEMO

雷莫

E - Outdoor Stepped Insert

文件：58.78 Kbytes 页数：2 Pages

LEMO

雷莫