丝印：GE7；Package：DSBGA；LM4671 Filterless High Efficiency 2.5W Switching Audio Amplifier

1FEATURES 2• No Output Filter Required for Inductive Loads • Externally Configurable Gain • Very Fast Turn On Time: 17μs (typ) • Minimum External Components • Click and pop Suppression Circuitry • Micro-Power Shutdown Mode • Available in Space-Saving DSBGA Package APPLICATIONS • Mobile

文件：919.86 Kbytes 页数：23 Pages

TI

德州仪器

丝印：GE7；Package：DSBGA；LM4671 Filterless High Efficiency 2.5W Switching Audio Amplifier

1FEATURES 2• No Output Filter Required for Inductive Loads • Externally Configurable Gain • Very Fast Turn On Time: 17μs (typ) • Minimum External Components • Click and pop Suppression Circuitry • Micro-Power Shutdown Mode • Available in Space-Saving DSBGA Package APPLICATIONS • Mobile

文件：919.86 Kbytes 页数：23 Pages

TI

德州仪器

丝印：GE7；Package：DSBGA；LM4671 Filterless High Efficiency 2.5W Switching Audio Amplifier

1FEATURES 2• No Output Filter Required for Inductive Loads • Externally Configurable Gain • Very Fast Turn On Time: 17μs (typ) • Minimum External Components • Click and pop Suppression Circuitry • Micro-Power Shutdown Mode • Available in Space-Saving DSBGA Package APPLICATIONS • Mobile

文件：919.86 Kbytes 页数：23 Pages

TI

德州仪器

丝印：GE7；Package：DSBGA；LM4671 Filterless High Efficiency 2.5W Switching Audio Amplifier

1FEATURES 2• No Output Filter Required for Inductive Loads • Externally Configurable Gain • Very Fast Turn On Time: 17μs (typ) • Minimum External Components • Click and pop Suppression Circuitry • Micro-Power Shutdown Mode • Available in Space-Saving DSBGA Package APPLICATIONS • Mobile

文件：919.86 Kbytes 页数：23 Pages

TI

德州仪器

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE70L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converte

文件：253.74 Kbytes 页数：5 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE70N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converte

文件：299.24 Kbytes 页数：5 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE70T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converte

文件：241.77 Kbytes 页数：4 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE730 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC c

文件：314.1 Kbytes 页数：5 Pages

GTM

勤益投资控股

General Purpose Disc Ceramic Capacitors

General Purpose Disc Ceramic Capacitors ■ General Purpose ■ Ideal For Use in Non-critical Coupling, Bypass and Filter Applications ■ Conformally Coated ■ Radial Leads GENERAL SPECIFICATIONS Temperature Range: -30°C to +85°C Voltage Range: 50, 100, 500, 1,000, 2,000, 3,000 WVDC Cap

文件：469.39 Kbytes 页数：3 Pages

MALLORY

Disc Ceramic Capacitors

-General Purpose -Ideal For Use in Non-critical Coupling, Bypass and Filter Applications -Conformally Coated -Radial Leads

文件：37.92 Kbytes 页数：3 Pages

MALLORY