N-channel 600V - 7A - DPAK Very fast PowerMESH TM IGBT

文件：454.86 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：GD6NC60H；Package：IPAK；N-channel 600 V, 7 A - IPAK Very fast PowerMESH??IGBT

文件：376.04 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 7A - DPAK Very fast PowerMESH TM IGBT

文件：467.28 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 7A - D2PAK / TO-220 / TO-220FP Very fast PowerMESH TM IGBT

文件：406.44 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 7A - D2PAK / TO-220 / TO-220FP Very fast PowerMESH TM IGBT

文件：406.44 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

文件：364.52 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体