丝印：GD18N40LZ；Package：DPAK；Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range.

文件：466.49 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：GD10NC60SD；Package：DPAK；10 A, 600 V fast IGBT

文件：1.07434 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：GD10NC60S；Package：DPAK；10 A, 600 V fast IGBT

文件：1.27233 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：GD19N40LZ；Package：DPAK；Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

文件：1.06591 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

IGBT模块

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.\n\nThey are designed for the applications such as hybrid and electric vehicle. • Low VCE(sat) Trench IGBT technology\n• 6μs short circuit capability\n• Maximum junction temperature 175oC\n• Fast & soft reverse recovery anti-parallel FWD\n• Isolated copper pinfin baseplate using Si3N4 AMB technology;

StarPower

斯达半导体

1700V IGBT模块

额定电压: 1700V\n额定电流: 1000A\n电路结构: Half Bridge\n芯片系列: L Low Loss and Fast IGBT;

StarPower

斯达半导体

1700V IGBT模块

额定电压: 1700V\n额定电流: 1000A\n电路结构: Half Bridge\n芯片系列: T Trench IGBT Medium Power;

StarPower

斯达半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：1200V 10A TO-252-2 SIC SCHOTTKY

GeneSiC Semiconductor

Package：TO-247-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：1200V 10A TO-247-2 SIC SCHOTTKY

GeneSiC Semiconductor

Package：TO-247-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：1700V 10A TO-247-2 SIC SCHOTTKY

GeneSiC Semiconductor