PASSIVE DEVICES - Spiral Bias Elements

DESCRIPTION The GC9000 series of spiral bias element chips are photolithographically fabricated planar spiral conductorssupported on a high quality fused quartz substrate. These devices are designed to meet hybrid microwave circuit requirements for DC power injection through Ku (or J) band. The

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MICROSEMI

美高森美

Silicon Passive Devices

The GC9000 series spiral inductor chips are planar passivated coils supported on a high quality fused quartz substrate. These devices are designed to meet hybrid microwave circuit requirements through Ku (or J) band. The actual inductor, which is photo-etch defined on a quartz substrate, consists of

Microchip

微芯科技

Package：模具；包装：卷带（TR） 功能：偏置网络 类别：RF/IF，射频/中频和 RFID RF 其它 IC 和模块 描述：QUARTZ INDUCTOR NON HERMETIC CHI

MICROCHIP

微芯科技

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source m

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STMICROELECTRONICS

意法半导体

Low-Power, High-Speed, Single-Supply Op Amp Comparator Reference ICs

General Description The MAX9000 family features the combination of a high speed operational amplifier, a 185ns comparator, and a precision 1.230V reference. These devices operate from a single +2.5V to +5.5V supply and draw less than 500µA of quiescent current. The MAX9001/MAX9004 feature a shutd

文件：249.04 Kbytes 页数：20 Pages

MAXIM

美信

Low-Power, High-Speed, Single-Supply Op Amp Comparator Reference ICs

General Description The MAX9000 family features the combination of a high speed operational amplifier, a 185ns comparator, and a precision 1.230V reference. These devices operate from a single +2.5V to +5.5V supply and draw less than 500µA of quiescent current. The MAX9001/MAX9004 feature a shutd

文件：249.04 Kbytes 页数：20 Pages

MAXIM

美信