RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source m

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STMICROELECTRONICS

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RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

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意法半导体

14-Bit Dual-Channel IF/Baseband Receiver Subsystem

文件：354.66 Kbytes 页数：28 Pages

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凌力尔特

14-Bit, 125Msps/105Msps/ 80Msps Low Power Octal ADCs

文件：455.8 Kbytes 页数：36 Pages

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凌力尔特

Dual 12-Bit 310Msps ADC

文件：1.47673 Mbytes 页数：28 Pages

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凌力尔特