SCHOTTKY BARRIER DIODES General Purpose TM

DESCRIPTION This unique mesa construction (GC9700, GC9701, and GC9702) provides high breakdown voltage with true Schottky characteristics without resorting to the use of a diffused guard ring. The GC9703 and GC9704 are planar schottky devices. The standard devices are available in glass axial lea

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MICROSEMI

美高森美

Silicon & GaAs Schottky Diodes

This unique mesa construction (GC9700, GC9701, and GC9702) provides high breakdown voltage with true Schottky characteristics without resorting to the use of a diffused guard ring. The GC9703 and GC9704 are planar schottky devices. The standard devices are available in glass axial leaded packages as

Microchip

微芯科技

Package：模具；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SI SCHOTTKY NON HERMETIC CHIP

MICROCHIP

微芯科技

Package：模具；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SI SCHOTTKY NON HERMETIC EPSM SM

MICROCHIP

微芯科技

Package：模具；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SI SCHOTTKY NON HERMETIC CHIP

MICROCHIP

微芯科技