首页 >GBU1004整流桥>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
LowNoise,WideBandwidth,MEMSAccelerometer | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowNoise,WideBandwidth,MEMSAccelerometer | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
StandardCMOSprocess. | APLUSAPLUS APLUS | APLUS | ||
tandardCMOSprocess | APLUSAPLUS APLUS | APLUS | ||
Abroadportfolioofhighperformance,best-in-classSerialMemoryProductstomeetallyourdesignrequirements. | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | Microchip | ||
verylowcostvoiceandmelodysynthesizerwith4-bitsCPU GeneralDescription TheAPExx04seriesareverylowcostvoiceandmelodysynthesizerwith4-bitsCPU.Theyhavevariousfeaturesincluding4-bitsALU,ROM,RAM,I/Oports,timers,clockgenerator,voiceandmelodysynthesizer,andPWM(Directdrive)output,etc.Theaudiosynthesizercontainson | APLUSAPLUS APLUS | APLUS | ||
THESLIMPOWERRELAY FEATURES •Slimsize 28mm(L)×5mm(W)×15mm(H) 1.102inch(L)×.197inch(W)×.591inch(H) permitshighdensitymounting •Wideswitchingcapacity:100mA/12VDC-6A/250VAC •Highsensitivity:170mW •Highbreakdown(4,000V)andsurge(6,000V)voltagebetweencontactsand | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=3.6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
26.5GHz,18GHzCOAXIALSWITCH FEATURES 1.Highfrequencycharacteristics(Impedance50Ω) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
26.5GHz,18GHzCOAXIALSWITCH FEATURES 1.Highfrequencycharacteristics(Impedance50Ω) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
2023+ |
GBU |
48000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
SIP-4 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
CTC |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
TSC |
21+ |
DIP-4 |
143 |
原装现货假一赔十 |
询价 | ||
TSC/台湾半导体 |
DIP-4 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
TSC |
22+ |
DIP-4 |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
TSC/台湾半导体 |
23+ |
DIP-4 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TSC/台湾半导体 |
2022 |
DIP-4 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
TSC/台湾半导体 |
2048+ |
DIP-4 |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
TSC/台湾半导体 |
23+ |
NA/ |
3408 |
原装现货,当天可交货,原型号开票 |
询价 |
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