丝印：GB7；Package：SOT-23-3；300mA RF ULDO REGULATOR

Features • Up to 300mA Output Current • Excellent ESR Stability • Low Standby Current • Low Dropout Voltage: VDROP = 250mV at 300mA • High Output Accuracy: ±1 • Good Ripple Rejection Ability: 75dB at 100Hz and IOUT = 100μA • Tight Load and Line Regulation • Low Temperature Coefficient • O

文件：715.83 Kbytes 页数：30 Pages

DIODES

美台半导体

丝印：GB7；Package：VSSOP；LM4924 Boomer™ Audio Power Amplifier Series 2 Cell Battery, 40mW Per Channel Output Capacitor-Less (OCL) Stereo Headphone Audio Amplifier

1FEATURES 23• 2-Cell 1.5V to 3.6V Battery Operation • OCL Mode for Stereo Headphone Operation • Unity-Gain Stable • “Click and Pop” Suppression Circuitry for Shutdown On and Off Transients • Active Low Micropower Shutdown • Thermal Shutdown Protection Circuitry APPLICATIONS • Portable T

文件：1.21715 Mbytes 页数：22 Pages

TI

德州仪器

丝印：GB7；Package：VSSOP；LM4924 Boomer™ Audio Power Amplifier Series 2 Cell Battery, 40mW Per Channel Output Capacitor-Less (OCL) Stereo Headphone Audio Amplifier

1FEATURES 23• 2-Cell 1.5V to 3.6V Battery Operation • OCL Mode for Stereo Headphone Operation • Unity-Gain Stable • “Click and Pop” Suppression Circuitry for Shutdown On and Off Transients • Active Low Micropower Shutdown • Thermal Shutdown Protection Circuitry APPLICATIONS • Portable T

文件：1.21715 Mbytes 页数：22 Pages

TI

德州仪器

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A

FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package • Speed 8 kHz to 60 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outline

文件：179.93 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with

文件：330.47 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o

文件：1.36326 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

文件：174.54 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

文件：152.86 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

High Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

文件：175.8 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

High Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

文件：155.16 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司