GAN190-650EBE中文资料650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package数据手册Nexperia规格书

描述 Description

The GAN140-650EBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance.

特性 Features

• Enhancement mode - normally-off power switch
• Ultra high frequency switching capability
• No body diode
• Low gate charge, low output charge
• Qualified for standard applications
• ESD protection
• RoHS, Pb-free, REACH-compliant
• High efficiency and high power density
• Low package inductance and low package resistance

应用 Application

High power density and high efficiency power conversion
AC-to-DC converters, totem pole PFC
DC-to-DC converters
Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
Datacom and telecom (AC-to-DC and DC-to-DC) converters
Motor drives
Solar (PV) inverters
Class D audio amplifiers, TV PSU and LED drivers