GAN039-650NTBA中文资料650 V、33 mΩ氮化镓(GaN) FET，采用CCPAK1212i封装数据手册Nexperia规格书

描述 Description

The GAN039-650NTBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
This product has been fully designed and qualified to meet AEC-Q101 requirements.

特性 Features

• Fully automotive qualified to AEC-Q101:
• 175 °C rating suitable for thermally demanding environments

• Simplified driver design as standard level MOSFET gate drivers can be used:
• 0 V to 12 V drive voltage
• Gate threshold voltage VGSth of 4 V

• Robust gate oxide with ±20 V VGS rating
• High gate threshold voltage of 4 V for gate bounce immunity
• Low body diode Vf for reduced losses and simplified dead-time adjustments
• Transient over-voltage capability for increased robustness
• CCPAK package technology:
• Improved reliability, with reduced Rth(j-mb) for optimal cooling
• Lower inductances for lower switching losses and EMI
• 175 °C maximum junction temperature
• High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
• Visual (AOI) soldering inspection, no need for expensive x-ray equipment
• Easy solder wetting for good mechanical solder joints

应用 Application

• Automotive On-Board-Charger systems
• Automotive DC-DC
• Hard and soft switching converters for industrial and datacom power
• Bridgeless totempole PFC
• PV and UPS inverters
• Servo motor drives