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GAL22V10D-25QJ

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25QJ

AllDevicesDiscontinued

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25QJ

AllDevicesDiscontinued

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25QJ

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25QJ

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25QJN

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25QJN

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25QJN

AllDevicesDiscontinued

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25QJN

AllDevicesDiscontinued

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25QP

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

供应商型号品牌批号封装库存备注价格
LITT
18+
DIP
743
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
LITT
23+
DIP
743
全新原装正品现货,支持订货
询价
LITT
24+
DIP
5000
全新原装正品,现货销售
询价
LITT
22+23+
DIP
8000
新到现货,只做原装进口
询价
LITT
24+
DIP
5000
只有原装
询价
LITT
21+
DIP
743
原装现货假一赔十
询价
LATTICE
24+
PLCC-28P
73
询价
LATTICE
22+
PLCC-28P
2000
进口原装!现货库存
询价
LAT
23+
65480
询价
Lattice Semiconductor Corporat
22+
28PLCC (11.51x11.51)
9000
原厂渠道,现货配单
询价
更多GAL22V10D-25PLN供应商 更新时间2025-7-29 14:06:00