首页 >GAL22V10D-10QJL>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Lattice Semiconductor Corporat |
22+ |
28PLCC (11.51x11.51) |
9000 |
原厂渠道,现货配单 |
询价 | ||
Lattice Semiconductor Corporat |
21+ |
28PLCC (11.51x11.51) |
13880 |
公司只售原装,支持实单 |
询价 | ||
LatticeSemiconductorCorp |
18+ |
28-LCC(J-Lead) |
6500 |
CPLD国内唯一一家特供服务商。 |
询价 | ||
LatticeSemiconductorCorp |
23+ |
28-PLCC(11.51x11.51) |
66800 |
进口原装一级分销 |
询价 | ||
Lattice Semiconductor Corporat |
21+ |
28-LCC(J 形引线) |
370 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
最新 |
2000 |
原装正品现货 |
询价 | ||||
Lattice Semiconductor Corporat |
21+ |
28-PLCC(11.51x11.51) |
56200 |
一级代理/放心采购 |
询价 | ||
LATTICE |
23+ |
原厂封装 |
2576 |
原装现货 |
询价 | ||
LATTICE |
21+ |
PLCC |
22889 |
原装现货假一赔十 |
询价 | ||
LATTICE |
20+ |
PLCC-28 |
1001 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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