INSULATED GATE BIPOLAR TRANSISTOR

VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher •

文件：138.73 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduct

文件：253.08 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher •

文件：138.73 Kbytes 页数：8 Pages

IRF

IGBT

DESCRIPTION · Low Gate Drive Requirement · High Current Handling Capability · Short Circuit Capability · High Power Density APPLICATIONS · Power Inverters · Motor Drives · UPS,PFC · High Voltage Auxiliaries

文件：328.13 Kbytes 页数：2 Pages

ISC

无锡固电

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduct

文件：253.08 Kbytes 页数：10 Pages

IRF