首页>G30N60C3D>规格书详情

G30N60C3D中文资料63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes数据手册Renesas规格书

PDF无图
厂商型号

G30N60C3D

功能描述

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

制造商

Renesas Renesas Technology Corp

中文名称

瑞萨 瑞萨科技有限公司

数据手册

下载地址下载地址二

更新时间

2025-9-23 22:59:00

人工找货

G30N60C3D价格和库存,欢迎联系客服免费人工找货

G30N60C3D规格书详情

描述 Description

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49014.

特性 Features

• 63A, 600V at TC= 25°C
• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ= 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode 

供应商 型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
15638
原装现货,当天可交货,原型号开票
询价
FAIRCHILD/仙童
25+
TO247
2905
原装正品,假一罚十!
询价
VISHAY/威世
21+
TO-247
12
原装现货假一赔十
询价
HARRIS
24+
TO-3P
10000
询价
INFINEON
20+
TO-247
38900
原装优势主营型号-可开原型号增税票
询价
仙童
2025+
TO247
32560
原装优势绝对有货
询价
FAIRCHILD/仙童
24+
TO247
22055
郑重承诺只做原装进口现货
询价
ON SEMI
23+
N/A
10
正规渠道,只有原装!
询价
INFINEO
23+
TO-247
8560
受权代理!全新原装现货特价热卖!
询价
FSC
TO-247
68500
一级代理 原装正品假一罚十价格优势长期供货
询价