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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
G30N60C3D	文件：299.66 Kbytes Page：9 Pages	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features •63A,600VatTC=25oC •TypicalFallTime...............230nsatTJ=150oC •ShortCircuitRating •LowConductionLoss •HyperfastAnti-ParallelDiode Packaging JEDECSTYLETO-247	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG30N60C3	文件：99.55 Kbytes Page：6 Pages	63A,600V,UFSSeriesN-ChannelIGBT TheHGTG30N60C3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG30N60C3D	文件：144.62 Kbytes Page：8 Pages	63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG30N60C3D	文件：131.12 Kbytes Page：8 Pages	63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode Description TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarieso	HARRIS HARRIS corporation	HARRIS
HGTG30N60C3D	文件：116.91 Kbytes Page：7 Pages	63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG30N60C3D	文件：299.66 Kbytes Page：9 Pages	63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes Features •63A,600VatTC=25oC •TypicalFallTime...............230nsatTJ=150oC •ShortCircuitRating •LowConductionLoss •HyperfastAnti-ParallelDiode Packaging JEDECSTYLETO-247	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IXGA30N60C3	文件：281.01 Kbytes Page：6 Pages	GenX3600VIGBT HighSpeedPTIGBTsfor40-100kHzswitching Features Optimizedforlowswitchinglosses SquareRBSOA Internationalstandardpackages	IXYS IXYS Integrated Circuits Division	IXYS
IXGA30N60C3	文件：839.36 Kbytes Page：4 Pages	600VGenX3IGBTsnextgeneration600VIGBTsforpowerconversionapplications	IXYS IXYS Integrated Circuits Division	IXYS
IXGH30N60C3	文件：281.01 Kbytes Page：6 Pages	GenX3600VIGBT HighSpeedPTIGBTsfor40-100kHzswitching Features Optimizedforlowswitchinglosses SquareRBSOA Internationalstandardpackages	IXYS IXYS Integrated Circuits Division	IXYS
IXGP30N60C3	文件：281.01 Kbytes Page：6 Pages	GenX3600VIGBT HighSpeedPTIGBTsfor40-100kHzswitching Features Optimizedforlowswitchinglosses SquareRBSOA Internationalstandardpackages	IXYS IXYS Integrated Circuits Division	IXYS
IXGP30N60C3	文件：839.36 Kbytes Page：4 Pages	600VGenX3IGBTsnextgeneration600VIGBTsforpowerconversionapplications	IXYS IXYS Integrated Circuits Division	IXYS
IXXH30N60C3	文件：212.03 Kbytes Page：6 Pages	XPTTM600VIGBT	IXYS IXYS Integrated Circuits Division	IXYS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市欧立现代科技有限公司	G30N60C3D	FSC	22+	TO-3P	6250	全新原装现货,欢迎询购!!	询价
深圳市金嘉锐电子有限公司	G30N60C3D	仙童	2024+	TO247	32560	原装优势绝对有货	询价
深圳市特顺芯科技有限公司	G30N60C3D	HARRIS	07+	TO-3P	10000		询价
深圳市星佑电子有限公司	G30N60C3D	哈里斯	06+	TO-247	2500	全新原装绝对有货	询价
深圳市博浩通科技有限公司	G30N60C3D	仙童/英飞凌/哈里斯	23+	TO-247	3000	全新原装	询价
深圳市百视威讯电子科技有限公司	G30N60C3D		23+	N/A	49500	正品授权货源可靠	询价
贸泽芯城（深圳）电子科技有限公司	G30N60C3D	HARRIS/哈里斯	21+ROHS	TO-3P	30153	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市赛美科科技有限公司	G30N60C3D	FSC		TO-247	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市富芯乐电子科技有限公司	G30N60C3D	FAIRCHILD	22+	SOT-5103&NBS	6700	全新原装品牌专营	询价
深圳庞田科技有限公司	G30N60C3D	HARRIS	2023+环保现货	TO-3P	18000	专注军工、汽车、医疗、工业等方案配套一站式服务	询价

更多G30N60C3D供应商更新时间2024-5-1 8:40:00

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