Rubber Push-In Bumpers

文件：98.86 Kbytes 页数：1 Pages

Heyco

Silicon N Channel Power MOS FET Power Switching

Features • Low on-resistance RDS(on)=12mΩ typ • Capable of 4.5 V gate drive • Low drive current • High density mounting • High speed switching tf=60ns typ.

文件：30.31 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel Power MOS FET Power Switching

Features • Low on-resistance RDS (on) = 12 mΩ typ • Capable of 4.5 V gate drive • Low drive current • High density mounting • High speed switching tf = 60 ns typ.

文件：63.29 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET Power Switching

Features • Low on-resistance RDS (on) = 12 mΩ typ • Capable of 4.5 V gate drive • Low drive current • High density mounting • High speed switching tf = 60 ns typ.

文件：63.29 Kbytes 页数：5 Pages

RENESAS

瑞萨