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H2011U

4&6TumblerPowerSwitchlocks

Features/Benefits •Positivedetent •Multi-poleandmulti-position •Snap-togetherassembly •Powerswitching

CK-COMPONENTS

C&K Components

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF2011(L)_15

SiliconNChannelMOSFETSeriesPowerSwitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HBO2011NIL

LampsforPhotolithography

Description PerkinElmerOptoelectronicsisaleadingmanufacturerofmercuryshortarclampsranginginoutputpowerfrom1000to8000watts.Theselampsareusedintheproductionofprintedcircuitboards,liquidcrystaldisplaysandsemiconductors.TheHSHSerieslampsareusedworldwideinmi

PerkinElmer

PerkinElmer Optoelectronics

HBO2011W

LampsforPhotolithography

Description PerkinElmerOptoelectronicsisaleadingmanufacturerofmercuryshortarclampsranginginoutputpowerfrom1000to8000watts.Theselampsareusedintheproductionofprintedcircuitboards,liquidcrystaldisplaysandsemiconductors.TheHSHSerieslampsareusedworldwideinmi

PerkinElmer

PerkinElmer Optoelectronics

详细参数

  • 型号:

    FTD2011A

  • 制造商:

    SANYO

  • 制造商全称:

    Sanyo Semicon Device

  • 功能描述:

    N CHANNEL MOS SILICON TRANSISTOR

供应商型号品牌批号封装库存备注价格
SANOY
最新
TSSOP
6800
全新原装公司现货低价
询价
SANYO
24+
TSSOP
5645
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
SANYO
20+
TSSOP08
2960
诚信交易大量库存现货
询价
SANYO
1709+
TSSOP-8
32500
普通
询价
SANYO/三洋
23+
TSSOP
50000
全新原装正品现货,支持订货
询价
SANOY
23+
TSSOP
50000
全新原装正品现货,支持订货
询价
SANOY
03+
TSSOP
270
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
SANYO/三洋
24+
NA/
1700
优势代理渠道,原装正品,可全系列订货开增值税票
询价
SANYO
23+
TSSOp8
7000
询价
原装SANOY
25+
TSSOP
270
原装正品,假一罚十!
询价
更多FTD2011A供应商 更新时间2025-7-16 14:31:00