P-Channel Silicon MOSFET General-Purpose Switching Device

Features • Low ON-resistance. • 4V drive. • Mounting height 1.1mm. • Composite type, facilitating high-density mounting.

文件：43.24 Kbytes 页数：4 Pages

SANYO

三洋

P-Channel Silicon MOSFET General-Purpose Switching Device

ONSEMI

安森美半导体

ELECTRICAL & MECHANICAL SPECIFICATION

FEATURES Gray coded, standard and complimentary versions PCB Terminals + extra stabilising terminals Standard 22.5° indexing 4-Bit Standard 45° indexing 3-Bit Adjustable stops to restrict number of positions Standard silver contacts, gold flashed Moulded 27.5mm diameter Spindl

文件：707.54 Kbytes 页数：2 Pages

LORLIN

Silicon P Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting

文件：53.29 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER

文件：1.10807 Mbytes 页数：10 Pages

Hittite