Silicon P Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting

文件：53.29 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel Power MOS FET High Speed Power Switching

HITACHI

日立

Power switching MOSFET

HITACHI

日立

GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER

文件：1.10807 Mbytes 页数：10 Pages

Hittite

nullSafety switch, double throw, non fusible, 60A, 600 VAC/VDC, 4 poles, 60 hp, NEMA 1

文件：192.7 Kbytes 页数：3 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 300mΩ(Max) @ VGS= 10V APPLICATIONS ·Current Regulators ·Solid State Circuit Breakers

文件：220.87 Kbytes 页数：3 Pages

ISC

无锡固电