首页 >FT6122D>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Infrareddetectormodulewithpreamp InfrareddetectormodulewithpreampThermoelectricallycooledtype Easy-to-usedetectormodulewithbuilt-inpreamp InfrareddetectormodulesoperatejustbyconnectingtoaDCpowersupply.ThedetectorelementisselectablefromamongInGaAs,PbS,PbSe,MCT,InAsandInSb,whichareallcombi | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | HAMAMATSU | ||
1200-OutputChannelTFTLCDSourceDriverwithTCON | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
100VDMOSSWITCHES DESCRIPTION RealizedwiththeMultipower-BCDmixedbipolar/CMOS/DMOSprocess,theL6122/23monolithicthreeDMOSswitchisdesignedforhighcurrent,highvoltageswitchingapplications.Eachofthethreeswitchesiscontrolledbyalogicinputandallthreearecontrolledbyacommonenableinput | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
ALUMINUMELECTROLYTICCAPACITORS | nichiconNichicon corporation 尼吉康日本尼吉康株式会社 | nichicon | ||
PNPEpitaxialPlanarSiliconTransistorDC/DCConverterAmplifier DC/DCConverterAmplifier Features •AdoptionofMBITprocess •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •Highspeedswitching •Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim(0.85mm) •Highallowablepowerdissipation •Halogemf | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
BipolarTransistor-30V,-3A,LowVCE(sat),PNPSingleMCPH6 Features •AdoptionofMBITprocess •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •Highspeedswitching •Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim(0.85mm) •Highallowablepowerdissipation •Halogemfreecompliance Applications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
BipolarTransistor-30V,-3A,LowVCE(sat),PNPSingleMCPH6 Features •AdoptionofMBITprocess •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •Highspeedswitching •Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim(0.85mm) •Highallowablepowerdissipation •Halogemfreecompliance Applications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
BipolarTransistor-30V,-3A,LowVCE(sat),PNPSingleMCPH6 Features •AdoptionofMBITprocess •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •Highspeedswitching •Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim(0.85mm) •Highallowablepowerdissipation •Halogemfreecompliance Applications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SMTPowerInductors | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
ShieldedPowerInductors | COILCRAFTCoilcraft lnc. 线艺美国线艺公司 | COILCRAFT |
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