IRF9130

-12A,-100V,0.30Ohm,P-ChannelPowerMOSFET

-12A,-100V,0.30Ohm,P-ChannelPowerMOSFET TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe

IRF9130

TRANSISTORSP-CHANNEL(Vdss=-100V,Rds(on)=0.30ohm,Id=-11A)

ProductSummary TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever

IRF9130

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

IRF9130

P-CHANNELPOWERMOSFET

IRF9130

P?밅HANNELPOWERMOSFET

IRF9130

iscN-ChannelMOSFETTransistor

IRF9130

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-11A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IRF9130SMD

P-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

IRFE9130

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTOR

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTOR Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitythe

IRFE9130

P-CHANNELPOWERMOSFET