FSS9130D

6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs; • 6A, -100V, rDS(ON) = 0.660Ω\n• Total Dose\n  - Meets Pre-RAD Specifications to 100K RAD (Si)\n• Single Event\n  - Safe Operating Area Curve for Single Event Effects\n  - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias\n• Dose Rate\n- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS\n- Typically Survives 2E12 if Current Limited to IDM\n• Photo Current\n- 1.5nA Per-RAD(Si)/s Typically\n• Neutron\n- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2\n- Usable to 3E14 Neutrons/cm2;

Description\nThe Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

FSS9130D

6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

FSS9130D1

6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

FSS9130D3

6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

FSS9130R

6A,-100V,0.660Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

GFC9130

PChannelPowerMOSFET

GM9130HV

3ALEDDriverwithDimmingControl

HDM9130

FrequencySynthesizer

I9130CFI

ISDCortex??M0ChipCorder

I9130CYI

ISDCortex??M0ChipCorder