5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

文件：45.65 Kbytes 页数：8 Pages

Intersil

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star

文件：81.57 Kbytes 页数：8 Pages

Intersil

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Intersil Star*Power™ Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Sta

文件：80.35 Kbytes 页数：8 Pages

Intersil

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star

文件：83.75 Kbytes 页数：8 Pages

Intersil