FSL214数据手册供应代理瑞萨Intersil第3页-114ic电子网

首页 >FSL2>规格书列表

零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
FSL234R	文件：46.03 Kbytes Page：8 Pages	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL234R1	文件：46.03 Kbytes Page：8 Pages	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL234R3	文件：46.03 Kbytes Page：8 Pages	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL234R4	文件：46.03 Kbytes Page：8 Pages	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL23A0D	文件：72.36 Kbytes Page：8 Pages	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin	Intersil Intersil Corporation	Intersil
FSL23A0D1	文件：72.36 Kbytes Page：8 Pages	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin	Intersil Intersil Corporation	Intersil
FSL23A0D3	文件：72.36 Kbytes Page：8 Pages	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin	Intersil Intersil Corporation	Intersil
FSL23A0R	文件：72.36 Kbytes Page：8 Pages	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin	Intersil Intersil Corporation	Intersil
FSL23A0R1	文件：72.36 Kbytes Page：8 Pages	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin	Intersil Intersil Corporation	Intersil
FSL23A0R3	文件：72.36 Kbytes Page：8 Pages	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin	Intersil Intersil Corporation	Intersil

<<<1 234 5 6 7 >>>

详细参数

型号：
FSL2
制造商：
INTERSIL
制造商全称：
Intersil Corporation
功能描述：
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	FSL22N60C3	IR	22+	TO262	6000	终端可免费供样,支持BOM配单	询价
深圳庞田科技有限公司	FSL22N60C3	IR	2023+环保现货	TO262	10	专注军工、汽车、医疗、工业等方案配套一站式服务	询价
深圳市创新迹电子有限公司	FSL22N60C3	IR	23+	3	6500	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	FSL22N60C3	IR	23+	6500	3	专注配单,只做原装进口现货	询价
天津市博通航睿技术有限公司	FSL22N60C3	IR	23+	TO262	7000		询价
深圳市赛美科科技有限公司	FSL230D3	HARRIS		CAN-3	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市宏捷佳电子科技有限公司	FSL23S	Good-Ark Semiconductor	25+	SOD-123F	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
上海金庆电子技术有限公司	FSL244BL	HUBBELL	新		11	全新原装货期两周	询价
深圳市华斯顿科技有限公司	FSL2520-1R0M=P2	TOKO	25+23+	SMD	40893	绝对原装正品全新进口深圳现货	询价
瀚佳科技(深圳)有限公司	FSL2520-1R0M=P2	TOKO	24+	SMD	36200	全新原装现货/放心购买	询价

更多FSL2供应商更新时间2025-7-27 14:00:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号