| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.03 Kbytes 页数:8 Pages | Intersil | Intersil | ||
4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.03 Kbytes 页数:8 Pages | Intersil | Intersil | ||
4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.03 Kbytes 页数:8 Pages | Intersil | Intersil | ||
4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.03 Kbytes 页数:8 Pages | Intersil | Intersil | ||
4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.03 Kbytes 页数:8 Pages | Intersil | Intersil | ||
4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.03 Kbytes 页数:8 Pages | Intersil | Intersil | ||
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:72.36 Kbytes 页数:8 Pages | Intersil | Intersil | ||
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:72.36 Kbytes 页数:8 Pages | Intersil | Intersil | ||
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:72.36 Kbytes 页数:8 Pages | Intersil | Intersil | ||
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:72.36 Kbytes 页数:8 Pages | Intersil | Intersil |
产品属性
- 产品编号:
FSL206MRL
- 制造商:
onsemi
- 类别:
集成电路(IC) > AC DC 转换器,离线开关
- 系列:
FPS™
- 包装:
卷带(TR)
- 输出隔离:
隔离
- 内部开关:
是
- 电压 - 击穿:
650V
- 拓扑:
反激
- 电压 - 供电 (Vcc/Vdd):
7V ~ 26V
- 占空比:
72%
- 频率 - 开关:
67kHz
- 故障保护:
限流,过载,超温,过压
- 工作温度:
-40°C ~ 150°C(TJ)
- 封装/外壳:
8-SMD,鸥翼
- 供应商器件封装:
8-LSOP
- 安装类型:
表面贴装型
- 描述:
IC OFFLINE SWITCH FLYBACK 8LSOP
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
25+ |
NA |
6000 |
全新原装!优势库存热卖中! |
询价 | ||
ONSemiconductor |
24+ |
8-LSOP |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源! |
询价 | ||
FAIRCHILD/仙童 |
20+ |
原装 |
65790 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ON Semiconductor |
24+ |
36500 |
一级代理/放心采购 |
询价 | |||
ON |
25+ |
SOP-8 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Fairchild/ON |
22+ |
8LSOP |
9000 |
原厂渠道,现货配单 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
SOP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
FAIRCHILD |
1315+ |
SOP |
36 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHILD |
原装 |
12551 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
ON |
2022+ |
PDIP-8 GW |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
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