FSF250D1中文资料Intersil数据手册PDF规格书
FSF250D1规格书详情
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
Features
• 24A, 200V, rDS(ON) = 0.110Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 12nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
产品属性
- 型号:
FSF250D1
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Truesemi |
1816+ |
TO-220F |
6523 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
ON Semiconductor |
2021+ |
SOIC |
57500 |
科研单位合格供应商!现货库存 |
询价 | ||
FAIRCHILD |
21+ |
ZIP-9 |
1341 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
询价 | ||
FSC |
21+ |
ZIP-9 |
865 |
原装现货假一赔十 |
询价 | ||
FSC/ON |
23+ |
原包装原封□□ |
2157 |
原装进口特价供应QQ1304306553更多详细咨询库存 |
询价 | ||
TRUESEMI/信安 |
23+ |
TO-220F |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
INTERSIL |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
ONSemiconductor |
23+ |
9-SIP |
66800 |
全新更新库存原厂原装现货 |
询价 | ||
FAIRCHILD |
23+ |
ZIP-9 |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
FairchildSem |
24+ |
9-SIP |
6980 |
原装现货,可开13%税票 |
询价 |