FSF250D中文资料Intersil数据手册PDF规格书
FSF250D规格书详情
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
Features
• 24A, 200V, rDS(ON) = 0.110Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 12nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
产品属性
- 型号:
FSF250D
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
2020+ |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
TRUESEMI/信安 |
23+ |
TO-220F |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
N/A |
TO220 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
TRUESEMI/信安 |
23+ |
TO-220F |
12000 |
原装正品真实现货杜绝虚假 |
询价 | ||
NIEC |
07+ |
TO-220 |
50000 |
询价 | |||
FairchildSemiconductor |
2022 |
ICSWITOVPUVLO9SIP |
5058 |
原厂原装正品,价格超越代理 |
询价 | ||
NIEC |
17+ |
TO220F-2 |
6200 |
询价 | |||
国产 |
23+ |
TO-TO-220F |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
TRUESEMI/信安 |
22+ |
TO-220F |
8900 |
英瑞芯只做原装正品!!! |
询价 |