FSF150D中文资料Intersil数据手册PDF规格书
FSF150D规格书详情
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
Features
• 25A, 100V, rDS(ON) = 0.070Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 7.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
产品属性
- 型号:
FSF150D
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
IR |
23+ |
TO-254 |
8000 |
只做原装现货 |
询价 | ||
IR |
23+ |
TO-254 |
7000 |
询价 | |||
FSF |
23+ |
1217+ |
6500 |
专注配单,只做原装进口现货 |
询价 | ||
N/A |
TO220 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
FAIRCHILD/仙童 |
23+ |
SIP-9 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
FairchildSemiconductor |
2022 |
ICSWITOVPUVLO9SIP |
5058 |
原厂原装正品,价格超越代理 |
询价 | ||
MDD |
23+ |
SOD-123FL |
10065 |
原装正品,有挂有货,假一赔十 |
询价 | ||
原装正品 |
23+ |
TO-220F |
33253 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
国产 |
23+ |
TO-220F |
10000 |
公司只做原装正品 |
询价 |