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1N60G-TND-R

N-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60H

1A竊?00VN-CHANNELMOSFET

KIAGuangdong Keyia Semiconductor Technology Co., Ltd

可易亚半导体广东可易亚半导体科技有限公司

1N60-KW

N-CHANNELENHANCEMENT

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60L-TMS-T

N-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60L-TND-R

N-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60P

40VDetectionswitchtube

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

1N60P

SMALLSIGNALSCHOTTKYDIODES

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

1N60P

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency

GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd

星合明辉电子山东星合明辉电子有限公司

1N60P

SMALLSIGNALSCHOTTKYDIODES

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

1N60P

SMALLSIGNALSCHOTTKYDIODE

FEATURES ◇Metalsilliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,Lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇

DSK

Diode Semiconductor Korea

1N60P

SmallSignalSchottkyDiodes

■Features ●VR40V ●IFAV30mA ■Applications ●Useinsuperhighspeedswitchingcircuits,smallcurrentrectifier

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

1N60P

SILICONSCHOTTKYBARRIERDIODE

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

1N60P

1.2A,600VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60P

SmallSignalSchottkyDiodes

Features ◇Metalsilliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,Lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

1N60P

SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS

Features: *HighReliability *LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching

WEITRONWEITRON

威堂電子科技

1N60P

GERMANIUMDIODES

Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione

DAESAN

Daesan Electronics Corp.

1N60P

SMALLSIGNALSCHOTTKYDIODES

Features ◇Metalsilliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,Lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

1N60P

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

1N60P

TECHNICALSPECIFICATIONSOFSMALLSIGNALSCHOTTKYDIODES

FEATURES *Metalsiliconjunction,majoritycarrierconduction. *Highcurrentcapability,lowforwardvoltagedrop. *ExtremelylowreversecurrentIR *Ultraspeedswitchingcharacteristics *Smalltemperaturecoefficientofforwardcharacteristics *SatisfactoryWavedetectionefficiency

DCCOMDc Components

直流元件直流元件有限公司

1N60P

SchottkyBarrierRectifier

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
23+
TO251
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
2022
TO251
80000
原装现货,OEM渠道,欢迎咨询
询价
FAIRCHILD/仙童
2122+
NA
60000
全新原装正品现货,假一赔十
询价
ON/安森美
2022+
SMD
5040
询价
FAIRCHILD/仙童
TO-251
货真价实,假一罚十
25000
询价
FAIRCHILD/仙童
22+
TO-251
31250
郑重承诺只做原装进口现货
询价
FAIRCHILD/仙童
22+
TO-251
40256
本公司只做原装进口现货
询价
FAIRCHILD/仙童
22+/23+
TO-251
9800
原装进口公司现货假一赔百
询价
ON/安森美
23+
TO-251
90000
只做原厂渠道价格优势可提供技术支持
询价
FAIRCHILD/仙童
22+
TO-251
20000
保证原装正品,假一陪十
询价
更多FQU1N60CTUMOS(场效应管)供应商 更新时间2024-6-8 10:59:00