RLD70N10

N-ChannelEnhancementMOSFET

Features VDS=100V,ID=70A RDS(ON)=8.3mΩ@VGS=10V HighPowerandcurrenthandingcapability Leadfreeproductisacquired SurfaceMountPackage MainApplications BatteryProtection LoadSwitch PowerManagement

SFF70N10C

70AMP600VOLT0.030ohmN-ChannelPowerMOSFET

SFF70N10M

70AMP600VOLT0.030ohmN-ChannelPowerMOSFET

SFF70N10Z

70AMP600VOLT0.030ohmN-ChannelPowerMOSFET

SPB70N10L

SIPMOSPower-Transistor

SPI70N10L

SIPMOSPower-Transistor

SPP70N10L

SIPMOSPower-Transistor

SSF70N10A

iscN-ChannelMOSFETTransistor

SSH70N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=70A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.023Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

SSH70N10

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.018Ω(Typ.)