IPB70N10SL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

IPI70N10SL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

IPP70N10SL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

NP70N10KUF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=70A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NP70N10KUF

ProductScoutAutomotive

PJD70N10

100VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@20A

PJD70N10SA-AU

100VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@20A

PJP70N10L

100VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@20A

RLD70N10

N-ChannelEnhancementMOSFET

Features VDS=100V,ID=70A RDS(ON)=8.3mΩ@VGS=10V HighPowerandcurrenthandingcapability Leadfreeproductisacquired SurfaceMountPackage MainApplications BatteryProtection LoadSwitch PowerManagement

SFF70N10C

70AMP600VOLT0.030ohmN-ChannelPowerMOSFET