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FQPF65N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.016Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

KSM65N06

60VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

PHB65N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=63A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHB65N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP65N06LTissup

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

PHB65N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP65N06LTissup

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

PHB65N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

PHB65N06T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=63A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHP65N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=63A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHP65N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP65N06LTissup

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

PHP65N06T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=63A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    FQB65N06

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    60V N-Channel MOSFET

供应商型号品牌批号封装库存备注价格
ON/安森美
24+
TO-263
505348
免费送样原盒原包现货一手渠道联系
询价
FAIRCHILD
2025+
TO-263
32560
原装优势绝对有货
询价
仙童
05+
TO-263
3500
原装进口
询价
FAIRCHILD
24+
TO-263(D2PAK)
8866
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAI
25+23+
TO263
72403
绝对原装正品现货,全新深圳原装进口现货
询价
FAIRCHILD
1822+
SOT-263
9852
只做原装正品假一赔十为客户做到零风险!!
询价
FAIRCHIL
24+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
FAIRCHILD
18+
TO-263(D
41200
原装正品,现货特价
询价
FAIRCHILD/仙童
2022+
146
全新原装 货期两周
询价
更多FQB65N06供应商 更新时间2025-7-29 17:06:00