首页 >FQB20N60L>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
600V,20AN-ChannelMOSFET | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
600V,20AN-ChannelMOSFET | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HighSpeedIGBTinNPT-technology HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature - | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
PowerFactorCorrection(PFC) Description TheGC20N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
PowerFactorCorrection(PFC) Description TheGC20N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
PowerFactorCorrection(PFC) Description TheGC20N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
600VPTIGBT | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
600VPTIGBT | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW |
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