丝印：GC20N60；Package：TO-220；Power Factor Correction (PFC)

Description The GC20N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap

文件：2.51102 Mbytes 页数：8 Pages

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谷峰半导体

600V N Channel SUPER JUNCTION MOSFET

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro

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谷峰半导体

600V/20A Trench Field Stop IGBT

Features 600V,20A VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA

文件：2.02518 Mbytes 页数：6 Pages

LUGUANG

鲁光电子

600V PT IGBT

文件：664.05 Kbytes 页数：7 Pages

SEMIHOW

600V PT IGBT

文件：644.27 Kbytes 页数：7 Pages

SEMIHOW