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FQD13N10L

100VLOGICN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD13N10L

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

FQD13N10L

N-ChannelQFETMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD13N10LTF

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

FQD13N10LTM

100VN-ChannelMOSFET

Features VDS(V)=100V ID=10A(VGS=10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

FQD13N10LTM

N-channelEnhancementModePowerMOSFET

Features VDS=100V,ID=18.1A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQD13N10LTM

100VN-ChannelMOSFET

Description ThisadvancedMOSFETtechnologyhasbeenespecially tailoredtoreduceon-stateresistance,andtoprovide superiorswitchingperformanceandhighavalanche energystrength.Thesedevicesaresuitableforswitched modepowersupplies,audioamplifier,DCmotorcontrol, andvariablesw

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

FQD13N10TF

D-PAKTapeandReelData

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD13N10TM

N-channelEnhancementModePowerMOSFET

Features VDS=100V,ID=18.1A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQI13N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    FQB13N10

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    100V N-Channel MOSFET

供应商型号品牌批号封装库存备注价格
FAIRCHILD
24+
TO-263
70750
询价
仙童
06+
TO-263
3500
原装库存
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRC
24+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
JINGDAO/晶导微
23+
SMB(DO-214AA)
69820
终端可以免费供样,支持BOM配单!
询价
24+
TO-263
6430
原装现货/欢迎来电咨询
询价
FAIRCHILD
1709+
SOT-263
32500
普通
询价
FAIRCHILD/仙童
2022+
TO-263
12888
原厂代理 终端免费提供样品
询价
FAIRCHILD/仙童
23+
SOT-263
107920
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
FAIRCHILD
2023+环保现货
TO-263
20000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
更多FQB13N10供应商 更新时间2025-7-17 10:50:00