RF AMPLIFIER MODEL

文件：73.95 Kbytes 页数：1 Pages

APITECH

Power MOSFET

Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

文件：230.62 Kbytes 页数：10 Pages

IRF

Low Conduction Losses

Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

文件：264.79 Kbytes 页数：11 Pages

IRF

DirectFET

Power MOSFET

Description The IRF6609PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

文件：271.58 Kbytes 页数：11 Pages

IRF