PNP Epitaxial Planar Silicon Transistor Motor Driver Applications

Motor Driver Applications Features • Composite type with 2 PNP transistors facilitating high-density mounting. • The FP213 is composed of 2 chips, each being equivalent to the 2SB1397, placed in one package.

文件：88.86 Kbytes 页数：3 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor Motor Driver Applications

Motor Driver Applications Features • Composite type with 2 NPN transistors, facilitating high-density mounting. • The FP214 is composed of 2 chips, each being equivalent to the 2SD2100, placed in one package.

文件：85.67 Kbytes 页数：3 Pages

SANYO

三洋

High-Frequency Amp, Differential Amp Applications

Features · Composite type with 2 transistors contained in the PCP package currently in use, improving the mounting efficiency greatly. · The FP215 is formed with two chips, being equivalent to the 2SA1724, placed in one package. · Excellent in thermal equilibrium and pair capability.

文件：87.62 Kbytes 页数：3 Pages

SANYO

三洋

LCD Backlight Drive Applications

LCD Backlight Drive Applications Features • Composite type with 2 transistors contained in the PCP5 package currently in use, improving the mounting efficiency greatly. • The FP216 is composed of two chips, each being equivalent to the 2SC3646, placed in one package.

文件：103.41 Kbytes 页数：3 Pages

SANYO

三洋

4G 2-way 60-400W Leading Edge Dimmer - Gunmetal

DESCRIPTION 4G 2-way 60-400W Leading Edge Dimmer - Gunmetal

文件：166.11 Kbytes 页数：1 Pages

KNIGHTSBRIDGE

high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount

[WJ] Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +45 dBm output IP3 performance and an output power of +31 dBm at 1-dB compression. Pro

文件：451.92 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1-Watt HFET

Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while prov

文件：610.61 Kbytes 页数：12 Pages

WJCI

1 - Watt HFET

Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while prov

文件：644.33 Kbytes 页数：13 Pages

WJCI

1-Watt HFET

Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while prov

文件：610.61 Kbytes 页数：12 Pages

WJCI

1 - Watt HFET

Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while prov

文件：644.33 Kbytes 页数：13 Pages

WJCI