1 - Watt HFET

Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while prov

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WJCI

1-Watt HFET

Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while prov

文件：610.61 Kbytes 页数：12 Pages

WJCI

1 watt HFET

Product Description\nThe FP2189 is a high performance  1- Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface mount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1 -dB compression, while pr ·  50 –4000 MHz\n·  +30 dBm P1dB\n·  +43 dBm Output IP3\n·  High Drain Efficiency\n·  18.5 dB Gain @ 900 MHz\n·  Lead-free/Green/RoHS compliant SOT-89 Package\n·  MTTF 100 YearsApplications\n·  Mobile Infrastructure\n·  CATV / DBS\n·  W-LAN / ISM\n·  RFID\n·  Defense / Homeland Security\n·  Fixed Wi;

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威讯联合

1 - Watt HFET

Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while prov

文件：644.33 Kbytes 页数：13 Pages

WJCI

Silicon N Channel Power MOS FET Power Switching

文件：56.01 Kbytes 页数：4 Pages

RENESAS

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Silicon N Channel Power MOS FET Power Switching

文件：210.26 Kbytes 页数：7 Pages

RENESAS

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