high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount

[WJ] Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +45 dBm output IP3 performance and an output power of +31 dBm at 1-dB compression. Pro

文件：451.92 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1 - Watt HFET

Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while prov

文件：644.33 Kbytes 页数：13 Pages

WJCI

1-Watt HFET

Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while prov

文件：610.61 Kbytes 页数：12 Pages

WJCI

1-Watt HFET

Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while prov

文件：610.61 Kbytes 页数：12 Pages

WJCI

1 - Watt HFET

Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while prov

文件：644.33 Kbytes 页数：13 Pages

WJCI

1 - Watt HFET

Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while prov

文件：644.33 Kbytes 页数：13 Pages

WJCI

high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount

[WJ] Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +45 dBm output IP3 performance and an output power of +31 dBm at 1-dB compression. Pro

文件：451.92 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1-Watt HFET

Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while prov

文件：610.61 Kbytes 页数：12 Pages

WJCI

1 - Watt HFET

Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while prov

文件：644.33 Kbytes 页数：13 Pages

WJCI

high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount

[WJ] Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +45 dBm output IP3 performance and an output power of +31 dBm at 1-dB compression. Pro

文件：451.92 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商